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 D1-28Z
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The D1-28Z is Designed for General Purpose Class C Amplifier Applications up to 1.0 GHz.
PACKAGE STYLE .280 4L STUD
A 45
C
B
FEATURES:
* PG = 8.0 dB Typ. at 1 W/1,000 MHz * Emitter Ballasting for Ruggedness * OmnigoldTM Metallization System
D
E B
C
E
J E F G I
MAXIMUM RATINGS
IC VCB PDISS TJ T STG JC 1.0 A 45 V 7 W @ TC = 25 OC -65 to +200 OC -65 to +150 OC 25 C/W
O
H K DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 .640 / 16.26 MINIMUM
inches / mm
#8-32 UNC MAXIMUM
inches / mm
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30
1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48
.255 / 6.48 .217 / 5.51 .285 / 7.24
ORDER CODE: ASI10807
CHARACTERISTICS
SYMBOL
BV CBO BV CER BV EBO ICBO hFE Cob PG C IC = 1 mA IC = 20 mA IE = 1 mA VCE = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V
TC = 25 OC
TEST CONDITIONS
RBE = 10
MINIMUM TYPICAL MAXIMUM
45 45 3.5 250
UNITS
V V V A --pF dB %
IC = 100 mA f = 1.0 MHz POUT = 1.0 W f = 1,000 MHz
15
150 5.0
7.0 65
8.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


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